Nobel Prize in Physics 2014

        

Seminal Papers by Hiroshi Amano & Isamu Akasaki :

1)75 Å GaN channel modulation doped field effect transistors
Jinwook Burm, William J. Schaff, Lester F. Eastman, Hiroshi Amano and Isamu Akasaki
Appl. Phys. Lett. 68, 2849 (1996)

2)Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, Tetsuya Takeuchi, Christian Wetzel, Hiroshi Amano and Isamu Akasaki
J. Appl. Phys. 85, 7682 (1999)

3)Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy
Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, Tetsuya Takeuchi, Christian Wetzel, Hiroshi Amano and Isamu Akasaki
Appl. Phys. Lett. 76, 876 (2000)

4)Control of strain in GaN by a combination of H2 and N2 carrier gases
Shigeo Yamaguchi, Michihiko Kariya, Masayoshi Kosaki, Yohei Yukawa, Shugo Nitta, Hiroshi Amano and Isamu Akasaki
J. Appl. Phys. 89, 7820 (2001)

5)Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
Shigeo Yamaguchi, Yasuo Iwamura, Yasuhiro Watanabe, Masayoshi Kosaki, Yohei Yukawa, Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki
Appl. Phys. Lett. 80, 802 (2002)

6)Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes
Daisuke Iida, Syunsuke Kawai, Nobuaki Ema, Takayoshi Tsuchiya, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
Appl. Phys. Lett. 105, 072101 (2014)

Seminal Papers by Shuji Nakamura:

1)Novel metalorganic chemical vapor deposition system for GaN growth
Shuji Nakamura, Yasuhiro Harada and Masayuki Seno
Appl. Phys. Lett. 58, 2021 (1991)

2)High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
Shuji Nakamura, Masayuki Senoh and Takashi Mukai
Appl. Phys. Lett. 62, 2390 (1993)

3)In x Ga(1−x)N/In y Ga(1−y)N superlattices grown on GaN films
Shuji Nakamura, Takashi Mukai, Masayuki Senoh, Shin‐ichi Nagahama and Naruhito Iwasa
J. Appl. Phys. 74, 3911 (1993)

4)Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Shuji Nakamura, Takashi Mukai and Masayuki Senoh
Appl. Phys. Lett. 64, 1687 (1994)

5)High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes
Shuji Nakamura, Takashi Mukai and Masayuki Senoh
J. Appl. Phys. 76, 8189 (1994)

6)InGaN/AlGaN blue‐light‐emitting diodes
Shuji Nakamura
J. Vac. Sci. Technol. A 13, 705 (1995)

7)Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 69, 1568 (1996)

8)Continuous‐wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 69, 3034 (1996)

9) Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku Appl. Phys. Lett. 69, 4056 (1996)

10) Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku Appl. Phys. Lett. 70, 868 (1997)

11) Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku Appl. Phys. Lett. 70, 1417 (1997

12) Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano and Kazuyuki Chocho Appl. Phys. Lett. 72, 2014 (1998)

Last updated on: February 3, 2017